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BUH1015 BUH1015HI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION The BUH1015and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
3 2 1
3 2 1
TO-218
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V CBO V CEO VEBO IC I CM IB I BM P tot T s tg Tj March 1998 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature
o
Valu e 1500 700 10 14 18 8 11 160 -65 to 150 150 70
Un it V V V A A A A W
o o
C C 1/8
BUH1015/BUH1015HI
THERMAL DATA
TO -218 ISOW AT T218 R t hj-ca se Thermal Resistance Junction-case Max 0.78 1.8
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CEO(sus) V EBO V CE(sat ) V BE(s at) hFE Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain RESISTIVE LO AD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA I E = 10 mA I C = 10 A I C = 10 A I C = 10 A I C = 10 A IB = 2 A IB = 2 A V CE = 5 V V CE = 5 V 7 5 10 700 10 1.5 1.5 14 Tj = 125 C
o
Min.
Typ .
Max. 0.2 2 100
Un it mA mA A V V V V
T j = 100 C
o
ts tf ts tf
V CC = 400 V I B1 = 2 A I C = 10 A I B1 = 2 A
IC = 10 A I B2 = -6 A
1.5 110 4 220
s ns s ns
f = 31250 Hz IB2 = -6 A 6 V c eflybac k = 1200 sin 10 t V 5
ts tf
INDUCTIVE LOAD Storage Time Fall T ime
IC = 6 A f = 64 KHz I B1 = 1 A V beo ff = - 2 V 6 V c eflybac k = 1100 sin 10 t 5
3.7 200 V
s ns
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area For TO-218
Safe Operating Area For ISOWATT218
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BUH1015/BUH1015HI
Thermal Impedance for TO-218 Thermal Impedance for ISOWATT218
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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BUH1015/BUH1015HI
Power Losses at 64 KHz Switching Time Inductive Load at 64KHz (see figure 2)
Reverse Biased SOA
BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at Tj = 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided the transistor to turn off (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, T j. A new set of curves have been defined to give total power losses, ts and tf as a function of IB1 at 64 KHz scanning frequencies for choosing the optimum drive. The test circuit is illustrated in figure 1. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 = 2 f = L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace.
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BUH1015/BUH1015HI
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
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BUH1015/BUH1015HI
TO-218 (SOT-93) MECHANICAL DATA
mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054
DIM.
A
C
L5 L3 L2
L6
D
E H F R 1 2 3
P025A
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G
BUH1015/BUH1015HI
ISOWATT218 MECHANICAL DATA
DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090
L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D
P025C
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BUH1015/BUH1015HI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . ..
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